Advancements in 300mm GaN-on-Si Technology with Industry’s First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors

Advancements in 300 mm GaN-on-Si enhancement-mode GaN N-MOSHEMT technology featuring monolithically integrated Si PMOS is presented. In this work, a true gate-last flow is demonstrated, where the high temperature steps of the Si PMOS transistors are completed before the gate formation of the GaN N-MOSHEMT. In addition to the Si PMOS integration, GaN N-MOSHEMT performance is enhanced with an fMAX of 335GHz (LG=90nm). A mmWave power amplifier with high power density of 3.11W/mm2 and 99.1dB FOM is demonstrated using the improved GaN N-MOSHEMT. Employing GaN N-MOSHEMT and Si PMOS, a vector modulator based mmWave phase shifter with 5-bit current-controlled DAC is designed and fabricated in this process. The phase shifter achieves full functionality with 360° phase tuning coverage, 5.3° RMS phase error, and <±1.7dB magnitude variation across different phase states, occupying 0.12mm2. This is industry’s first demonstration of a complex monolithic GaN-Si CMOS circuit, implemented in 300mm GaN-on-Si technology.